Oxford Instruments PlasmaPro Cobra 300

The inductively coupled plasma reactive ion etch system can etch III-V materials including InP, GaAs and GaN using fluorinated and chlorinated chemistries. It processes small pieces up to 200mm wafers, with process gases Cl2, BCl3, HBr, SF6, C4F8, CHF3, O2, N2 and Ar. The temperature range from -150 to 400C allows flexible processing; high-density reactive species at low pressure achieve high etch rates, excellent uniformity and clean vertical profiles, with laser endpoint detection for precise targeting.